22 April 1987 Formation Of Submicron Silicon-Nitride Patterns By Lift-Off Method Using ECR-CVD
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Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941034
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Submicron silicon-nitride patterns were successfully formed by lift-off method using an electron cyclotron resonance (ECR)CVDsystem. In this system nitrogen or ammonia gas is introduced into the plasma chamber and is excited under ECR condition (2.45GHz microwave power and 875 Gauss magnetic flux density), and the plasma was extracted into deposition chamber filled with silane gas. The temperature of wafer surface increased gradually with increasing deposition time, but remained less than 105°C. A lift-off process with dimethyl ketone was carried out after slight-etching by hydro fluoric acid. Up to 5000Å thick patterns of SiN were formed. A 1500Å thick SiN pattern on GaAs wafer were annealed at 820°C for 20 minutes. SiN patterns maintained their shape and there was no out-diffusion of Ga and As into SiN. Films were characterized by FT-IR and ESR. Both SiN films formed by nitrogen and ammonia showed good etch resistance compared with films formed by plasma enhanced CVD or Sputtering.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Shikata, H. Hayashi, H. Takahashi, K. Yoshida, "Formation Of Submicron Silicon-Nitride Patterns By Lift-Off Method Using ECR-CVD", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); doi: 10.1117/12.941034; https://doi.org/10.1117/12.941034
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