Reactive Ion Etching (RIE) Of Gratings In Inp For Distributed Feedback (DFB) Lasers Using An Intermediate Dielectric Layer

L. Tarof; K. Fox

doi:10.1117/12.941049

22 April 1987 Reactive Ion Etching (RIE) Of Gratings In Inp For Distributed Feedback (DFB) Lasers Using An Intermediate Dielectric Layer

L. Tarof, K. Fox

Author Affiliations +

Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941049
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

A technique for the reliable fabrication of gratings at 385nm periods in InP/InGaAsP has been demonstrated. A two stage RIE process involving an intermediate dielectric masking layer was used to produce grating with amplitudes up to 220nm. These structures have been successfully overgrown by LPE and processed into working DFB lasers.

Citation Download Citation

L. Tarof and K. Fox "Reactive Ion Etching (RIE) Of Gratings In Inp For Distributed Feedback (DFB) Lasers Using An Intermediate Dielectric Layer", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941049

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