Vertical Sidewall Reactive Ion Etching (RIE) Of GaAs and Al[sub]x[/sub]Ga[sub]1[/sub]_[sub]x[/sub]AS (X=0.76) Using BC1[sub]3[/sub]/CC1[sub]2[/sub]F[sub]2[/sub]/He At Equal Rates

Sayan D. Mukherjee

doi:10.1117/12.941032

22 April 1987 Vertical Sidewall Reactive Ion Etching (RIE) Of GaAs and Al_xGa₁__xAS (X=0.76) Using BC1₃/CC1₂F₂/He At Equal Rates

Sayan D. Mukherjee

Author Affiliations +

Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941032
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

A phenomenological study of Reactive Ion Etching (RIE) of GaAs and Al.Gal_xAS (x=0.76) using BC13/CC12F2/He has been carried out in order to obtain equal rates for etching the two semiconductors with vertical walls and smooth etched surfaces. The influences of 02 and H2, added purposely or inadvertently, the roles of added CC1₂F₂ and He, and the effect of wafer size (loading effect) have been investigated on a limited basis. Equal etch rates, vertical (to tilde 1°) etched walls and smooth etched surfaces were attained for both GaAs and A1GaAs with and without a GaAs capping layer and with no special surface treatment of the wafers prior to etching in a commercially available RIE system used for the studies.

Citation Download Citation

Sayan D. Mukherjee "Vertical Sidewall Reactive Ion Etching (RIE) Of GaAs and Al_xGa₁__xAS (X=0.76) Using BC1₃/CC1₂F₂/He At Equal Rates", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941032

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