2 April 2011 Self-assembly patterning for sub-15nm half-pitch: a transition from lab to fab
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Proceedings Volume 7970, Alternative Lithographic Technologies III; 79700F (2011); doi: 10.1117/12.881293
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States
Abstract
Directed self-assembly is an emerging technology that to-date has been primarily driven by research efforts in university and corporate laboratory environments. Through these environments, we have seen many promising demonstrations of forming self-assembled structures with small half pitch (<15 nm), registration control, and various device-oriented shapes. Now, the attention turns to integrating these capabilities into a 300mm pilot fab, which can study directed selfassembly in the context of a semiconductor fabrication environment and equipment set. The primary aim of this study is to create a 300mm baseline process of record using a 12nm half-pitch PS-b-PMMA lamellae block copolymer in order to establish an initial measurement of the defect density due to inherent polymer phase separation defects such as dislocations and disclinations.
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Chris Bencher, Jeffrey Smith, Liyan Miao, Cathy Cai, Yongmei Chen, Joy Y. Cheng, Daniel P. Sanders, Melia Tjio, Hoa D. Truong, Steven Holmes, William D. Hinsberg, "Self-assembly patterning for sub-15nm half-pitch: a transition from lab to fab", Proc. SPIE 7970, Alternative Lithographic Technologies III, 79700F (2 April 2011); doi: 10.1117/12.881293; https://doi.org/10.1117/12.881293
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KEYWORDS
Directed self assembly

Semiconducting wafers

Etching

Optical lithography

Lithography

Polymers

Chemical vapor deposition

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