Guided self-assembly of block-copolymer for CMOS technology: a comparative study between grapho-epitaxy and surface chemical modification

Lorea Oria; Alaitz Ruiz de Luzuriaga; Xavier Chevalier; Juan A. Alduncin; David Mecerreyes; Raluca Tiron; Stephanie Gaugiran; Francesc Perez-Murano

doi:10.1117/12.878486

2 April 2011 Guided self-assembly of block-copolymer for CMOS technology: a comparative study between grapho-epitaxy and surface chemical modification

Lorea Oria, Alaitz Ruiz de Luzuriaga, Xavier Chevalier, Juan A. Alduncin, David Mecerreyes, Raluca Tiron, Stephanie Gaugiran, Francesc Perez-Murano

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Proceedings Volume 7970, Alternative Lithographic Technologies III; 79700P (2011) https://doi.org/10.1117/12.878486
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Recent progress in Block Copolymer lithography has shown that guided self-assembly is a viable alternative for pushing forward the resolution limits of optical lithography. The main two self assembly methods considered so far have been the surface chemical modification, which is based on the chemical modification of a brush grafted to the silicon, and the grapho-epitaxy, which is based on creating topographic patterns on the surface. We have tested these two approaches for the 22 nm node and beyond CMOS technology, using PS-PMMA block copolymers synthesized by RAFT (Reversible Addition-Fragmentation Chain Transfer) polymerization.

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Lorea Oria, Alaitz Ruiz de Luzuriaga, Xavier Chevalier, Juan A. Alduncin, David Mecerreyes, Raluca Tiron, Stephanie Gaugiran, and Francesc Perez-Murano "Guided self-assembly of block-copolymer for CMOS technology: a comparative study between grapho-epitaxy and surface chemical modification", Proc. SPIE 7970, Alternative Lithographic Technologies III, 79700P (2 April 2011); https://doi.org/10.1117/12.878486

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