Paper
4 April 2011 Development and characterization of carbon nanotube processes for NRAM technology
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Abstract
NRAM technology, a non-volatile memory based on the use of carbon nanotubes, overcomes the limitations of other memory technology types (including traditional Flash), for sub-40nm nodes, and is currently developed in manufacturing fabs. The NRAM technology process flow involves the deposition of a film of carbon nanotubes onto silicon wafers at several of the critical layers (using spin coating techniques). In this paper, we present the key steps of the development and characterization of carbon nanotube processes applied to NRAM technology, focusing on specific deposition techniques, thickness control, and defectivity.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gilles Amblard "Development and characterization of carbon nanotube processes for NRAM technology", Proc. SPIE 7970, Alternative Lithographic Technologies III, 797017 (4 April 2011); https://doi.org/10.1117/12.879142
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Cited by 3 scholarly publications.
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KEYWORDS
Semiconducting wafers

Thin film coatings

Carbon nanotubes

Oxides

Silicon

Absorbance

Coating

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