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4 April 2011 Scatterometry sensitivity for NIL process
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Abstract
In this paper scatterometry sensitivity up to 28nm HP resin pattern and beyond by using RCWA (Rigorous Coupled Wave-analysis) simulation is described. A criterion, defined as the sum of the absolute difference of the reflectivity values between the nominal and slightly different conditions from nominal through the spectrum, is introduced. The criterion of this analysis is a kind of quantification of the sensitivity comparing with 65 nm HP resist pattern of ArF immersion lithography process.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takahiro Miyakawa, Kazuhiro Sato, Koichi Sentoku, and Hideki Ina "Scatterometry sensitivity for NIL process", Proc. SPIE 7970, Alternative Lithographic Technologies III, 79701N (4 April 2011); doi: 10.1117/12.880910; https://doi.org/10.1117/12.880910
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