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20 April 2011A new methodology for TSV array inspection
A new methodology for inspection of TSV (Through Silicon Via) process wafers is developed by utilizing an optical
diffraction signal from the wafers. The optical system uses telecentric illumination and has a two-dimensional sensor in
order to capture the diffraction light from TSV arrays. The diffraction signal modulates the intensity of the wafer image.
Furthermore, the optical configuration itself is optimized. The diffraction signal is sensitive to via-shape variations, and
an abnormal via area is analyzed using the signal. Using the test wafers with deep hole patterns on silicon wafers, the
performance is evaluated and the sensitivities for various pattern profile changes were confirmed. This new methodology
is available for high-volume manufacturing of the future TSV-3D CMOS devices.
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Yoshihiko Fujimori, Takashi Tsuto, Yuji Kudo, Takeshi Inoue, Kazuya Okamoto, "A new methodology for TSV array inspection," Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 79710I (20 April 2011); https://doi.org/10.1117/12.879379