20 April 2011 High-speed atmospheric imaging of semiconductor wafers using rapid probe microscopy
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Abstract
The aggressive device scaling imposed by the International Technology Roadmap for Semiconductors (ITRS) is introducing additional and more demanding challenges to current in-line monitoring tools. In this paper we present a new probe microscopy based technology, the Rapid Probe Microscope (RPM), which produces nano-scale images using a height contrast mechanism in a non-vacuum environment. The system offers the possibility to address metrology challenges in alternative ways to existing review and inspection tools. This paper presents applications of the RPM process which cater to the requirements of the semiconductor industry. Results on several standard semiconductor wafer layers have been used to demonstrate the capabilities of the RPM process, including nano-scale surface imaging at high image capture rates.
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Priyanka Kohli, Jeff Lyons, Andrew D. L. Humphris, Benjamin D. Bunday, Abraham Arceo, Akira Hamaguchi, Dilip Patel, David Bakker, "High-speed atmospheric imaging of semiconductor wafers using rapid probe microscopy", Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 797119 (20 April 2011); doi: 10.1117/12.879456; https://doi.org/10.1117/12.879456
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