ITRS lithography's stringent specifications for the 22nm node are a major challenge for the semiconductor industry. With
the EUV point insertion at 16nm node, ArF lithography is expected to reach its fundamental limits. The prevailing view
of holistic lithography methods, together with double patterning techniques, has targeted bringing lithography
performance towards the 22nm node (i.e., closer to the immersion scanner resolution limit) to an acceptable level.
At this resolution limit, a mask is the primary contributor of systematic errors within the wafer intra-field domain. As the
ITRS CDU specification shrinks, it would be crucial to monitor the mask static and dynamic critical dimension (CD)
changes in the fab, and use the data to control the intra-field CDU performance in a most efficient way. Furthermore
optimization and monitoring of process windows becomes more critical due to the presence of mask 3D effects.
This paper will present double patterning inter- and intra-field data, for CDU and PW monitoring and optimization,
measured by Applied Materials' mask inspection and CD-SEM tools. Special emphasis was given to speed and
effectiveness of the inspection for a production environment