20 April 2011 Scatterometry for EUV lithography at the 22-nm node
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Moore's Law continues to drive improvements to lithographic resolution to increase integrated circuit transistor density, improve performance, and reduce cost. For the 22 nm node and beyond, extreme ultraviolet lithography (EUVL) is a promising technology with λ=13.5 nm, a larger k1 value and lower cost of ownership than other available technologies. For small feature sizes, process control will be increasingly challenging, as small features will create measurement uncertainties, yet with tighter specifications. Optical scatterometry is a primary candidate metrology for EUV lithography process control. Using simulation and experimental data, this work will explore scatterometry's application to a typical lithography process being used for EUV development, which should be representative of lithography processes that will be utilized for EUV High Volume manufacturing (HVM). EUV lithography will be performed using much thinner photoresist thicknesses than were used at the 248nm or 193nm lithography generations, and will probably include underlayers for adhesion improvement; these new processes conditions were investigated in this metrological study.
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Benjamin Bunday, Benjamin Bunday, Victor Vartanian, Victor Vartanian, Liping Ren, Liping Ren, George Huang, George Huang, Cecilia Montgomery, Cecilia Montgomery, Warren Montgomery, Warren Montgomery, Alex Elia, Alex Elia, Xiaoping Liu, Xiaoping Liu, } "Scatterometry for EUV lithography at the 22-nm node", Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 797120 (20 April 2011); doi: 10.1117/12.881407; https://doi.org/10.1117/12.881407


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