20 April 2011 EB defect inspection of EUV resist patterned wafer for hp 32 nm and beyond
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It is important to control the defect level of the EUV lithography mask because of pellicle-less. We studied the resist patterned wafer inspection method using EB inspection system. In this paper, the defect detection sensitivity of EB inspection system is quantified using hp 32 nm line and space pattern with about 5 nm LWR (Line Width Roughness). Programmed defects of 13 nm narrowing and 10 nm widening have been detected successfully after the optimization of column and inspection condition. Next, the defects detected by mask inspection system and EB wafer inspection system were compared and were in good agreement for printed killer defects. In these results, EB inspection system is proved to be useful for EUV resist inspection. Further, we evaluated the resist material damage by EB inspection irradiation and indicated the direction of reducing the shrinkage.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mari Nozoe, Mari Nozoe, Toshihiko Tanaka, Toshihiko Tanaka, Takashi Kamo, Takashi Kamo, Shinji Kubo, Shinji Kubo, Tomohiro Tamori, Tomohiro Tamori, Noriaki Takagi, Noriaki Takagi, Takeshi Yamane, Takeshi Yamane, Tsuneo Terasawa, Tsuneo Terasawa, Hiroyuki Shigemura, Hiroyuki Shigemura, Osamu Suga, Osamu Suga, } "EB defect inspection of EUV resist patterned wafer for hp 32 nm and beyond", Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 797123 (20 April 2011); doi: 10.1117/12.879346; https://doi.org/10.1117/12.879346

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