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20 April 2011 Expanding the applications of computational lithography and inspection (CLI) in mask inspection, metrology, review, and repair
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Abstract
Mask manufacturers will be impacted by two significant technology requirements at 22nm and below: The first is more extensive use of resolution enhancement technologies (RET), such as OPC or Inverse Lithography Technology (ILT), and Source Mask Optimization (SMO); the second is EUV technology. Both will create difficulties for mask inspection, defect disposition, metrology, review, and repair. For example, the use of ILT and SMO significantly increases mask complexity, making mask defect disposition more challenging than ever. EUV actinic inspection and AIMSTM will not be available for at least a few years, which makes EUV defect inspection and disposition more difficult, particularly regarding multilayer defects. Computational Lithography and Inspection (CLI), which has broad applications in mask inspection, metrology, review, and repair, has become essential to fill this technology gap. In this paper, several such CLI applications are presented and discussed.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Linyong Pang, Danping Peng, Peter Hu, Dongxue Chen, Lin He, Ying Li, Chris Clifford, and Vikram Tolani "Expanding the applications of computational lithography and inspection (CLI) in mask inspection, metrology, review, and repair", Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 79712A (20 April 2011); https://doi.org/10.1117/12.879535
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