Paper
20 April 2011 Metrology of micro-step height structures using 3D scatterometry in 4x-nm advance DRAM
Mason Duan, Clark Chen, Calvin Hsu, Elvis Wang, ZhiQing Xu, Elsie Yu, Qiongyan Yuan, Sungchul Yoo, Zhengquan Tan
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Abstract
As DRAM design rules scale below 4Xnm, controlling the micro-step height caused by the etching process after patterning becomes more critical because it affects the post Chemical Mechanical Planarization (CMP) process window and furthermore affects yield. In this study, the latest Multi-Azimuth angle capability of Scatterometry Critical Dimension (SCD) was used to analyze the model of the micro-step height of nitride. SCD results were verified with Atomic Force Microscope (AFM) measurements.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mason Duan, Clark Chen, Calvin Hsu, Elvis Wang, ZhiQing Xu, Elsie Yu, Qiongyan Yuan, Sungchul Yoo, and Zhengquan Tan "Metrology of micro-step height structures using 3D scatterometry in 4x-nm advance DRAM", Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 79712J (20 April 2011); https://doi.org/10.1117/12.881322
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KEYWORDS
Single crystal X-ray diffraction

Atomic force microscopy

Scatterometry

Metrology

Etching

3D metrology

Chemical mechanical planarization

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