15 April 2011 Performance of EUV molecular resists based on fullerene derivatives
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This paper summarizes the development of EUV molecular resists based on fullerene derivatives: the lithographic evaluation results of EUV resists using a small-field exposure tool (SFET). Moreover this is the first report on the application of fullerene-based molecular resists to half-pitch (hp) 3x-nm test device fabrication using a full-field step-and-scan exposure tool (EUV1).
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroaki Oizumi, Hiroaki Oizumi, Kentaro Matsunaga, Kentaro Matsunaga, Koji Kaneyama, Koji Kaneyama, Julius Joseph Santillan, Julius Joseph Santillan, Gousuke Shiraishi, Gousuke Shiraishi, Toshiro Itani, Toshiro Itani, } "Performance of EUV molecular resists based on fullerene derivatives", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797209 (15 April 2011); doi: 10.1117/12.879302; https://doi.org/10.1117/12.879302

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