15 April 2011 Performance of EUV molecular resists based on fullerene derivatives
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Abstract
This paper summarizes the development of EUV molecular resists based on fullerene derivatives: the lithographic evaluation results of EUV resists using a small-field exposure tool (SFET). Moreover this is the first report on the application of fullerene-based molecular resists to half-pitch (hp) 3x-nm test device fabrication using a full-field step-and-scan exposure tool (EUV1).
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Hiroaki Oizumi, Hiroaki Oizumi, Kentaro Matsunaga, Kentaro Matsunaga, Koji Kaneyama, Koji Kaneyama, Julius Joseph Santillan, Julius Joseph Santillan, Gousuke Shiraishi, Gousuke Shiraishi, Toshiro Itani, Toshiro Itani, } "Performance of EUV molecular resists based on fullerene derivatives", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797209 (15 April 2011); doi: 10.1117/12.879302; https://doi.org/10.1117/12.879302
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