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15 April 2011 A novel double patterning approach for 30nm dense holes
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Double Patterning Technology (DPT) was commonly accepted as the major workhorse beyond water immersion lithography for sub-38nm half-pitch line patterning before the EUV production. For dense hole patterning, classical DPT employs self-aligned spacer deposition and uses the intersection of horizontal and vertical lines to define the desired hole patterns. However, the increase in manufacturing cost and process complexity is tremendous. Several innovative approaches have been proposed and experimented to address the manufacturing and technical challenges. A novel process of double patterned pillars combined image reverse will be proposed for the realization of low cost dense holes in 30nm node DRAM. The nature of pillar formation lithography provides much better optical contrast compared to the counterpart hole patterning with similar CD requirements. By the utilization of a reliable freezing process, double patterned pillars can be readily implemented. A novel image reverse process at the last stage defines the hole patterns with high fidelity. In this paper, several freezing processes for the construction of the double patterned pillars were tested and compared, and 30nm double patterning pillars were demonstrated successfully. A variety of different image reverse processes will be investigated and discussed for their pros and cons. An economic approach with the optimized lithography performance will be proposed for the application of 30nm DRAM node.
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Dennis Shu-Hao Hsu, Walter Wang, Wei-Hsien Hsieh, Chun-Yen Huang, Wen-Bin Wu, Chiang-Lin Shih, and Steven Shih "A novel double patterning approach for 30nm dense holes", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79720D (15 April 2011);

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