15 April 2011 Optimization of pitch-split double patterning photoresist for applications at the 16nm node
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Abstract
Pitch-split resist materials have been developed for the fabrication of sub-74 nm pitch semiconductor devices. A thermal cure method is used to enable patterning of a second layer of resist over the initially formed layer. Process window, critical dimension uniformity, defectivity and integration with fabricator applications have been explored. A tone inversion process has been developed to enable the application of pitch split to dark field applications in addition to standard bright field applications.
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Steven J. Holmes, Cherry Tang, Sean Burns, Yunpeng Yin, Rex Chen, Chiew-seng Koay, Sumanth Kini, Hideyuki Tomizawa, Shyng-Tsong Chen, Nicolette Fender, Brian Osborn, Lovejeet Singh, Karen Petrillo, Guillaume Landie, Scott Halle, Sen Liu, John C. Arnold, Terry Spooner, Rao Varanasi, Mark Slezak, Matthew Colburn, "Optimization of pitch-split double patterning photoresist for applications at the 16nm node", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79720G (15 April 2011); doi: 10.1117/12.881489; https://doi.org/10.1117/12.881489
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