15 April 2011 Optimization of pitch-split double patterning photoresist for applications at the 16nm node
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Pitch-split resist materials have been developed for the fabrication of sub-74 nm pitch semiconductor devices. A thermal cure method is used to enable patterning of a second layer of resist over the initially formed layer. Process window, critical dimension uniformity, defectivity and integration with fabricator applications have been explored. A tone inversion process has been developed to enable the application of pitch split to dark field applications in addition to standard bright field applications.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven J. Holmes, Steven J. Holmes, Cherry Tang, Cherry Tang, Sean Burns, Sean Burns, Yunpeng Yin, Yunpeng Yin, Rex Chen, Rex Chen, Chiew-seng Koay, Chiew-seng Koay, Sumanth Kini, Sumanth Kini, Hideyuki Tomizawa, Hideyuki Tomizawa, Shyng-Tsong Chen, Shyng-Tsong Chen, Nicolette Fender, Nicolette Fender, Brian Osborn, Brian Osborn, Lovejeet Singh, Lovejeet Singh, Karen Petrillo, Karen Petrillo, Guillaume Landie, Guillaume Landie, Scott Halle, Scott Halle, Sen Liu, Sen Liu, John C. Arnold, John C. Arnold, Terry Spooner, Terry Spooner, Rao Varanasi, Rao Varanasi, Mark Slezak, Mark Slezak, Matthew Colburn, Matthew Colburn, } "Optimization of pitch-split double patterning photoresist for applications at the 16nm node", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79720G (15 April 2011); doi: 10.1117/12.881489; https://doi.org/10.1117/12.881489

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