Negative-tone imaging (NTI) at the 22nm node: process and material development

Jason Cantone; Karen Petrillo; Yongan Xu; Guillaume Landie; Shinichiro Kawakami; Shannon Dunn; Matt Colburn

doi:10.1117/12.879719

15 April 2011 Negative-tone imaging (NTI) at the 22nm node: process and material development

Jason Cantone, Karen Petrillo, Yongan Xu, Guillaume Landie, Shinichiro Kawakami, Shannon Dunn, Matt Colburn

Proceedings Volume 7972, Advances in Resist Materials and Processing Technology XXVIII; 79720M (2011) https://doi.org/10.1117/12.879719
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

With 22nm logic node arriving prior to EUV implementation, alternative immersion optical lithographic processes are required to drive down to smaller feature sizes. There is an ongoing effort to examine the application of the negative tone imaging (NTI) process for current and future nodes. Although NTI has previously shown difficulties with respect to swelling, high chemical reactivity with oxygen, and the need for special equipment needed for the solvent-based development, NTI photoresists (PR) typically exhibit stronger adhesion to silicon than that of positive tone photoresists (a characteristic that helps mitigate pattern collapse). We will provide suggestions on how to improve the image quality, as well as the resulting defectivity, for desired geometries. This paper will primarily focus on the full litho process optimization and demonstrate repeatable, and manufacturable critical dimension uniformity (CDU), and defectivity optimization for trench and via structures.

Citation Download Citation

Jason Cantone, Karen Petrillo, Yongan Xu, Guillaume Landie, Shinichiro Kawakami, Shannon Dunn, and Matt Colburn "Negative-tone imaging (NTI) at the 22nm node: process and material development", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79720M (15 April 2011); https://doi.org/10.1117/12.879719

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