BARC surface property matching for negative-tone development of a conventional positive-tone photoresist

Douglas J. Guerrero; Vandana Krishnamurthy; Daniel M. Sullivan

doi:10.1117/12.881508

15 April 2011 BARC surface property matching for negative-tone development of a conventional positive-tone photoresist

Douglas J. Guerrero, Vandana Krishnamurthy, Daniel M. Sullivan

Proceedings Volume 7972, Advances in Resist Materials and Processing Technology XXVIII; 79720Q (2011) https://doi.org/10.1117/12.881508
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

The main properties controlling a successful negative-tone development (NTD) process include surface energy of the BARC or silicon hardmask, reflectivity control, and type of spin-on carbon (SOC) layer utilized. In this paper, we studied the BARC and silicon-containing hardmask properties needed to achieve successful NTD of a conventional positive-tone photoresist. The surface energy mismatch between BARC and silicon-containing hardmask poses challenges for patterning dense structures. Interaction of the SOC layer and the photoresist was observed, even with the silicon hardmask film present in between these two layers. Strict reflectivity elimination does not guarantee a successful outcome, rather precise control of reflectivity is required to enhance the overall lithographic process.

Citation Download Citation

Douglas J. Guerrero, Vandana Krishnamurthy, and Daniel M. Sullivan "BARC surface property matching for negative-tone development of a conventional positive-tone photoresist", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79720Q (15 April 2011); https://doi.org/10.1117/12.881508

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