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15 April 2011 Designing materials for advanced microelectronic patterning applications using controlled polymerization RAFT technology
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Abstract
Reversible Addition Fragmentation Chain Transfer (RAFT) polymerization technology enables the production of polymers possessing low polydispersity (PD) in high yield for many applications. RAFT technology also enables control over polymer architecture. With synthetic control over these polymer characteristics, a variety of polymers can be designed and manufactured for use in advanced electronic applications. By matching the specific RAFT reagent and monomer combinations, we can accommodate monomer reactivity and optimize acrylate or methacrylate polymerizations (193 and 193i photoresist polymers) or optimize styrenic monomer systems (248 nm photoresist polymers) to yield polymers with PD as low as 1.05. For 193i lithography, we have used RAFT technology to produce block copolymers comprising of a random "resist" block with composition and size based on conventional dry photoresist materials and a "low surface energy" block The relative block lengths and compositions may be varied to tune solution migration behavior, surface energy, contact angles, and solubility in developer. Directed self assembly is proving to be an interesting and innovative method to make 2- and even 3-dimensional periodic, uniform patterns. Two keys to acceptable performance of directed self assembly from block copolymers are the uniformity and the purity of the materials will be discussed.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael T. Sheehan, William B. Farnham, Charles R. Chambers, Hoang V. Tran, Hiroshi Okazaki, Yefim Brun, Matthew L. Romberger, and James R. Sounik "Designing materials for advanced microelectronic patterning applications using controlled polymerization RAFT technology", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79720T (15 April 2011); https://doi.org/10.1117/12.882960
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