15 April 2011 Bound PAG resists: an EUV and electron beam lithography performance comparison of fluoropolymers
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Abstract
One of the most promising resist design strategies for the development of high resolution materials for EUV lithography is the PAG anion-bound polymer approach. We have published several reports in the past few years on the structure/property relationships of anion bound PAG resist polymers. This paper will focus on relative performance of novel bound PAG polymers in EUV and electron beam lithographies. We will analyze the performance characteristics of a series of well characterized bound PAG resist polymers using several polymerizable PAG monomers. Due to the limited access to EUV exposure tools, we analyzed the initial lithographic performance with electron beam lithography for improved cycles of learning. We have found several examples of poor correlation between EUV and e-beam (EB) lithography results. We will offer rational for the difference in performance, with the goal of improved insight into both EB and EUV resist design.
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Luisa D. Bozano, Luisa D. Bozano, Phillip J. Brock, Phillip J. Brock, Hoa D. Truong, Hoa D. Truong, Martha I. Sanchez, Martha I. Sanchez, Gregory M. Wallraff, Gregory M. Wallraff, William D. Hinsberg, William D. Hinsberg, Robert D. Allen, Robert D. Allen, Masaki Fujiwara, Masaki Fujiwara, Kazuhiko Maeda, Kazuhiko Maeda, } "Bound PAG resists: an EUV and electron beam lithography performance comparison of fluoropolymers", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797218 (15 April 2011); doi: 10.1117/12.884519; https://doi.org/10.1117/12.884519
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