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15 April 2011 Calculated reactivity analysis of photoacid generators for EUV resist
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Abstract
We evaluated reactivity of photoacid generators for EUV resist using the quantum chemical calculation. As the secondary electron from the polymer in resist causes the reaction of photoacid generator, the reactivity of photoacid generator is determined as its electron affinity. We performed optimization of the molecular structure with and without electron addition to the photoacid generator and calculated each molecular energy. We defined the absolute value of the difference of molecular energy as the stabilization energy, which can be the electron affinity of photoacid generator. The typical substituents to photoacid generators of triphenylsulfonium trifluoromethanesulfonate and tricyclohexylsulfonium trifluoromethanesulfonate were investigated. We found that incorporation of electron withdrawing group enhances the reactivity of photoacid generators.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Endo and S. Tagawa "Calculated reactivity analysis of photoacid generators for EUV resist", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79721J (15 April 2011); https://doi.org/10.1117/12.878942
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