A study on post-exposure delay of negative tone resist and its chemistry

Medhat Toukhy; Margareta Paunescu; Chunwei Chen

doi:10.1117/12.882072

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15 April 2011 A study on post-exposure delay of negative tone resist and its chemistry

Medhat Toukhy, Margareta Paunescu, Chunwei Chen

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Proceedings Volume 7972, Advances in Resist Materials and Processing Technology XXVIII; 79721L (2011) https://doi.org/10.1117/12.882072
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Exceptional post exposure delay (PED), CD stability, up to 72 hours was reported. This study was conducted using two negative resist formulations identical in their composition except for their PAG type. A mechanism by which the photoacid is protected from relatively moderate levels of airborne amines is proposed. Evidence of room temperature interaction between the resist components and the acid during post exposure delay was also suggested. Therefore, the PED outcome could be the result of two opposing mechanisms.

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Medhat Toukhy, Margareta Paunescu, and Chunwei Chen "A study on post-exposure delay of negative tone resist and its chemistry", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79721L (15 April 2011); https://doi.org/10.1117/12.882072

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