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15 April 2011 Reduction of micro-bridging defects for 193nm immersion resist
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Abstract
Factors such as post-develop hydrophobicity, polymer aggregation and acid diffusion length are driving forces in the formation of micro bridging defects. In this report, solutions for each possible cause are proposed and tested. It is proven that micro-bridging levels can be significantly reduced through a multi-tiered approach.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lijing Gou, Vinay Nair, Hiroyuki Mori, Adam Olson, David Swindler, and Anton Devilliers "Reduction of micro-bridging defects for 193nm immersion resist", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79721P (15 April 2011); https://doi.org/10.1117/12.881546
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