15 April 2011 Development of molecular resists based on Phenyl[4]calixarene for EBL
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Abstract
In this paper, we report current performance of the negative-tone molecular resists based on calix[4]resorcinarene (CRA) by Electron Beam Lithography (EBL). We have developed hydroxyphenyl calix[4]resorcinarenes (H-CRAs) designed hydroxy-groups outer to adhere patterns to wafers. Hydroxy groups help patterns adhere to wafers, to restrain collapse of patterns. Moreover, we additionally controlled hydrophobicity of H-CRA by the alkyl-groups (R), which make the sensitivity higher. The negative-tone resist based on these H-CRAs shows well-defined 25-50nm half-pitch patterns, and the increase in hydrophobicity of H-CRA by the alkyl-groups (R) made the high sensitivity. Furthermore, the optimization of these resist formulation improved sensitivity and LER.
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Masaaki Takasuka, Masaaki Takasuka, Yu Okada, Yu Okada, Hiromi Hayashi, Hiromi Hayashi, Masatoshi Echigo, Masatoshi Echigo, } "Development of molecular resists based on Phenyl[4]calixarene for EBL", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797223 (15 April 2011); doi: 10.1117/12.879122; https://doi.org/10.1117/12.879122
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