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15 April 2011 Etch durable spin-on hard mask
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As decreasing the device feature size, the film stack structure used in resist process is also changing. Especially multilayer stack film structure is getting popular for pattern formation on critical layers. Our approach is to form a spin-on hard mask film with high etch resistance by introduction of a new baking function. The results show that a spin-on hard mask film processed by an underlayer coating system of Tokyo Electron Ltd. (TEL) has drastically improved etch resistance compared to a conventional system. We will report the availability of new underlayer system using several kinds of underlayer materials.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Makoto Muramatsu, Mitsuaki Iwashita, Takashi Kondo, Hisashi Hirose, and Seiji Fujimoto "Etch durable spin-on hard mask", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797226 (15 April 2011);

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