15 April 2011 Sensitive polysulfone based chain scissioning resists for 193nm lithography
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Abstract
Chain scissioning resists do not require addition of photoacid generators to function. Previously reported chain scissioning polysulfone resists were able to achieve enhanced sensitivity by incorporation of absorbing repeat units, but these groups also inhibited the depolymerization reaction, which could further enhance sensitivity. Here we report the development of sensitive polysulfone chain scissioning resists for 193 nm that are able to undergo depolymerization. The effect of depolymerization of LER is also discussed. These polymers underwent CD shrinkage upon overdose, which may be useful for double patterning processes.
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Yong Keng Goh, Yong Keng Goh, Lan Chen, Lan Chen, Anneke Dorgelo, Anneke Dorgelo, Xie Peng, Xie Peng, Neal Lafferty, Neal Lafferty, Bruce Smith, Bruce Smith, Paul Zimmerman, Paul Zimmerman, Warren Montgomery, Warren Montgomery, Idriss Blakey, Idriss Blakey, Andrew K. Whittaker, Andrew K. Whittaker, } "Sensitive polysulfone based chain scissioning resists for 193nm lithography", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79722E (15 April 2011); doi: 10.1117/12.881700; https://doi.org/10.1117/12.881700
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