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15 April 2011 Sensitive polysulfone based chain scissioning resists for 193nm lithography
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Chain scissioning resists do not require addition of photoacid generators to function. Previously reported chain scissioning polysulfone resists were able to achieve enhanced sensitivity by incorporation of absorbing repeat units, but these groups also inhibited the depolymerization reaction, which could further enhance sensitivity. Here we report the development of sensitive polysulfone chain scissioning resists for 193 nm that are able to undergo depolymerization. The effect of depolymerization of LER is also discussed. These polymers underwent CD shrinkage upon overdose, which may be useful for double patterning processes.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yong Keng Goh, Lan Chen, Anneke Dorgelo, Xie Peng, Neal Lafferty, Bruce Smith, Paul Zimmerman, Warren Montgomery, Idriss Blakey, and Andrew K. Whittaker "Sensitive polysulfone based chain scissioning resists for 193nm lithography", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79722E (15 April 2011);

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