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15 April 2011 Negative photo-imageable spin-on dielectrics: report on progress, challenges, and opportunities
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Abstract
From the perspectives of IC fabrication simplification, cost reduction, and waste material cutback, it is highly desirable to combine the traditional pattern formation step (lithographical processes) and the pattern transfer step (etch processes) into a single step. Photo-imageable spin-on dielectrics (PSOD) render it possible to achieve the aforementioned goal. However, the bestowed dual functionalities on PSOD put great challenges on the material design and development. PSOD needs not only to match all the performances of the advanced resists, but also to undertake all the duties of the dielectrics on the chips. We wish to report our modular approach employing Si-containing materials to address the challenge and to meet the requirements from the different material roles. This paper will also discuss the investigation and progress on lithographic performance, cure behaviors, thermal stability, and electrical and mechanical properties.
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Ruzhi M. Zhang, Chien-Hsien S. Lee, Elizabeth Wolfer, Tatsuro Nagahara, Mark Neisser, and Ralph R. Dammel "Negative photo-imageable spin-on dielectrics: report on progress, challenges, and opportunities", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79722K (15 April 2011); https://doi.org/10.1117/12.871114
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