15 April 2011 Method of ellipsometric characterization of the resist and DBARC interface
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Abstract
Anti-reflective layers benefit CD and profile control in high resolution lithography. Traditionally, they have not been applied to implant levels because the required CD control was less stringent than for other layers. When present a traditional BARC film interferes with the doping process unless removed using a costly dry BARC open etch. Nevertheless, as implant features move to evermore challenging k1 values, reflection control becomes more unavoidable; firstly to control residual standing wave structures on the resist profile and secondly to maintain acceptable CD dimensions on substrates which exhibit large reflectivity variations at both the cross-wafer and the wafer-to-wafer level. An important consideration for this application is to monitor and minimize intermixing between the resist and DBARC layers. Any method to do so must be sensitive to layers less than 10 nm thickness. The use of ellipsometry is investigated in this work to show the degree to which intermixing, if any, is detectable. A method and its requirements are described that predicts intermixing down to Angstrom thickness. Cross-section SEM shows the effect from an optimized process (no intermixing).
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Michael Reilly, James F. Cameron, Sabrina Wong, Adam Ware, "Method of ellipsometric characterization of the resist and DBARC interface", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79722O (15 April 2011); doi: 10.1117/12.880982; https://doi.org/10.1117/12.880982
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