15 April 2011 The enhanced photoresist shrink process technique toward 22nm node
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Abstract
In fine patterning process technology, the pattern shrink process technique is indispensable in addition to pitch shrink. Tokyo Electron has previously demonstrated the application of this technique to trench-pattern shrink for dual trench LELE, simple hole shrink for the circular pattern, and rectangle pattern shrink for cut mask of SADP+line cut. In this paper, we introduce technology that can shrink photoresist for application to a short-trench and contact hole pattern. Using chemical shrink as a reference for comparison, we report on the effectiveness of TEL's original ALD SiO2 shrink process. In addition, we propose various contact pitch shrink schemes for applying double patterning technique.
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Kenichi Oyama, Kenichi Oyama, Shohei Yamauchi, Shohei Yamauchi, Kazuo Yabe, Kazuo Yabe, Arisa Hara, Arisa Hara, Sakurako Natori, Sakurako Natori, Hidetami Yaegashi, Hidetami Yaegashi, } "The enhanced photoresist shrink process technique toward 22nm node", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79722Q (15 April 2011); doi: 10.1117/12.878947; https://doi.org/10.1117/12.878947
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