15 April 2011 The enhanced photoresist shrink process technique toward 22nm node
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In fine patterning process technology, the pattern shrink process technique is indispensable in addition to pitch shrink. Tokyo Electron has previously demonstrated the application of this technique to trench-pattern shrink for dual trench LELE, simple hole shrink for the circular pattern, and rectangle pattern shrink for cut mask of SADP+line cut. In this paper, we introduce technology that can shrink photoresist for application to a short-trench and contact hole pattern. Using chemical shrink as a reference for comparison, we report on the effectiveness of TEL's original ALD SiO2 shrink process. In addition, we propose various contact pitch shrink schemes for applying double patterning technique.
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Kenichi Oyama, Kenichi Oyama, Shohei Yamauchi, Shohei Yamauchi, Kazuo Yabe, Kazuo Yabe, Arisa Hara, Arisa Hara, Sakurako Natori, Sakurako Natori, Hidetami Yaegashi, Hidetami Yaegashi, "The enhanced photoresist shrink process technique toward 22nm node", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79722Q (15 April 2011); doi: 10.1117/12.878947; https://doi.org/10.1117/12.878947

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