22 March 2011 Applicability of global source mask optimization to 22/20nm node and beyond
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Abstract
Source-mask optimization (SMO) in optical lithography has in recent years been the subject of increased exploration as an enabler of 22/20nm and beyond technology nodes [1-6]. It has been shown that intensive optimization of the fundamental degrees of freedom in the optical system allows for the creation of non-intuitive solutions in both the source and mask, which yields improved lithographic performance. This paper will demonstrate the value of SMO software in resolution enhancement techniques (RETs). Major benefits of SMO include improved through-pitch performance, the possibility of avoiding double exposure, and superior performance on two dimensional (2D) features. The benefits from only optimized source, only optimized mask, and both source and mask optimized together will be demonstrated. Furthermore, we leverage the benefits from intensively optimized masks to solve large array problems in memory use models (MUMs). Mask synthesis and data prep flows were developed to incorporate the usage of SMO, including both RETs and MUMs, in several critical layers during 22/20nm technology node development. Experimental assessment will be presented to demonstrate the benefits achieved by using SMO during 22/20nm node development.
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Kehan Tian, Moutaz Fakhry, Aasutosh Dave, Alexander Tritchkov, Jaione Tirapu-Azpiroz, Alan E. Rosenbluth, David Melville, Masaharu Sakamoto, Tadanobu Inoue, Scott Mansfield, Alexander Wei, Young Kim, Bruce Durgan, Kostas Adam, Gabriel Berger, Gandharv Bhatara, Jason Meiring, Henning Haffner, Byung-Sung Kim, "Applicability of global source mask optimization to 22/20nm node and beyond", Proc. SPIE 7973, Optical Microlithography XXIV, 79730C (22 March 2011); doi: 10.1117/12.879703; https://doi.org/10.1117/12.879703
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