22 March 2011 Innovative self-aligned triple patterning for 1x half pitch using single "spacer deposition-spacer etch" step
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Abstract
We successfully demonstrate a new approach to achieve 15nm half pitch with a spacer based selfaligned triple patterning (SATP). This new concept has a single spacer deposition and etch step to achieve 15nm half pitch using immersion lithography. Current spacer based triple or quadruple patterning approaches use two iterations of "spacer deposition / spacer etch" for pitch splitting, thus generating multi-modal trench CD, line CD and, trench depth population leading to challenging process control. The new concept overcomes CD population issues and reduces additional steps over implemented double patterning, thus could relax process window. The key innovative aspect is an undercut dry trim achieved by a selective dry etch process, followed by a flowable CVD (EternaTM FCVDTM) based gap-fill that can fill the undercut structures.
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Bencherki Mebarki, Hao D. Chen, Yongmei Chen, Aunchan Wang, Jingmei Liang, Kedar Sapre, Tushar Mandrekar, Xiaolin Chen, Ping Xu, Pokhui Blanko, Christopher Ngai, Chris Bencher, Mehul Naik, "Innovative self-aligned triple patterning for 1x half pitch using single "spacer deposition-spacer etch" step", Proc. SPIE 7973, Optical Microlithography XXIV, 79730G (22 March 2011); doi: 10.1117/12.881574; https://doi.org/10.1117/12.881574
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