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22 March 2011 Accuracy and performance of 3D mask models in optical projection lithography
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Abstract
Different mask models have been compared: rigorous electromagnetic field (EMF) modeling, rigorous EMF modeling with decomposition techniques and the thin mask approach (Kirchhoff approach) to simulate optical diffraction from different mask patterns in projection systems for lithography. In addition, each rigorous model was tested for two different formulations for partially coherent imaging: The Hopkins assumption and rigorous simulation of mask diffraction orders for multiple illumination angles. The aim of this work is to closely approximate results of the rigorous EMF method by the thin mask model enhanced with pupil filtering techniques. The validity of this approach for different feature sizes, shapes and illumination conditions is investigated.
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Viviana Agudelo, Peter Evanschitzky, Andreas Erdmann, Tim Fühner, Feng Shao, Steffen Limmer, and Dietmar Fey "Accuracy and performance of 3D mask models in optical projection lithography", Proc. SPIE 7973, Optical Microlithography XXIV, 79730O (22 March 2011); https://doi.org/10.1117/12.879053
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