Hotspot fixing using ILT

Woojoo Sim; Sunggon Jung; Hyun-Jong Lee; Sungsoo Suh; Jung-Hoon Ser; Seong-Woon Choi; Chang-Jin Kang; Thomas Cecil; Christopher Ashton; David Irby; Xin Zhou; D.H. Son; Guangming Xiao; David Kim

doi:10.1117/12.879781

22 March 2011 Hotspot fixing using ILT

Woojoo Sim, Sunggon Jung, Hyun-Jong Lee, Sungsoo Suh, Jung-Hoon Ser, Seong-Woon Choi, Chang-Jin Kang, Thomas Cecil, Christopher Ashton, David Irby, Xin Zhou, D.H. Son, Guangming Xiao, David Kim

Author Affiliations +

Proceedings Volume 7973, Optical Microlithography XXIV; 79731L (2011) https://doi.org/10.1117/12.879781
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

For low k1 lithography the resolution of critical patterns on large designs can require advanced resolution enhancement techniques for masks including scattering bars, complicated mask edge segmentation and placement, etc. Often only a portion of a large layout will need this sophisticated mask design (the hotspot), with the remainder of layout being relatively simple for OPC methods to correct. In this paper we show how inverse lithography technology (ILT) can be used to correct selected regions of a large design after standard OPC has been used to correct the simple portions of the layout. The hotspot approach allows a computationally intensive ILT to be used in a limited way to correct the most difficult portions of a design. We will discuss the most important issues such as: model matching between ILT and OPC corrections; transition region corrections near the ILT and OPC boundary region; mask complexity; total combined runtime. We will show both simulated and actual wafer lithographic improvements in the hotspot regions.

Citation Download Citation

Woojoo Sim, Sunggon Jung, Hyun-Jong Lee, Sungsoo Suh, Jung-Hoon Ser, Seong-Woon Choi, Chang-Jin Kang, Thomas Cecil, Christopher Ashton, David Irby, Xin Zhou, D.H. Son, Guangming Xiao, and David Kim "Hotspot fixing using ILT", Proc. SPIE 7973, Optical Microlithography XXIV, 79731L (22 March 2011); https://doi.org/10.1117/12.879781

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