22 March 2011 Hotspot fixing using ILT
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Abstract
For low k1 lithography the resolution of critical patterns on large designs can require advanced resolution enhancement techniques for masks including scattering bars, complicated mask edge segmentation and placement, etc. Often only a portion of a large layout will need this sophisticated mask design (the hotspot), with the remainder of layout being relatively simple for OPC methods to correct. In this paper we show how inverse lithography technology (ILT) can be used to correct selected regions of a large design after standard OPC has been used to correct the simple portions of the layout. The hotspot approach allows a computationally intensive ILT to be used in a limited way to correct the most difficult portions of a design. We will discuss the most important issues such as: model matching between ILT and OPC corrections; transition region corrections near the ILT and OPC boundary region; mask complexity; total combined runtime. We will show both simulated and actual wafer lithographic improvements in the hotspot regions.
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Woojoo Sim, Woojoo Sim, Sunggon Jung, Sunggon Jung, Hyun-Jong Lee, Hyun-Jong Lee, Sungsoo Suh, Sungsoo Suh, Jung-Hoon Ser, Jung-Hoon Ser, Seong-Woon Choi, Seong-Woon Choi, Chang-Jin Kang, Chang-Jin Kang, Thomas Cecil, Thomas Cecil, Christopher Ashton, Christopher Ashton, David Irby, David Irby, Xin Zhou, Xin Zhou, D.H. Son, D.H. Son, Guangming Xiao, Guangming Xiao, David Kim, David Kim, } "Hotspot fixing using ILT", Proc. SPIE 7973, Optical Microlithography XXIV, 79731L (22 March 2011); doi: 10.1117/12.879781; https://doi.org/10.1117/12.879781
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