23 March 2011 Recessive self-aligned double patterning with gap-fill technology
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Proceedings Volume 7973, Optical Microlithography XXIV; 79731S (2011); doi: 10.1117/12.881658
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States
Abstract
In this paper, a recessive self-aligned double patterning (RSADP) process enabled by gap-fill technology is proposed and developed for BEOL applications. FEOL application is also possible by adding gap-fill/CMP steps to reverse the tone of contact/trench patterns. Compared with positive-tone spacer self-aligned double patterning (SADP), RSADP technique can reduce the process complexity by using less masks to pattern 2-D features. With a RSADP process, we successfully demonstrate (half-pitch) 50nm contact and 30nm line/space patterns using dry lithography.
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Yijian Chen, Xumou Xu, Yongmei Chen, Liyan Miao, Hao Chen, Pokhui Blanco, Chris S. Ngai, "Recessive self-aligned double patterning with gap-fill technology", Proc. SPIE 7973, Optical Microlithography XXIV, 79731S (23 March 2011); doi: 10.1117/12.881658; https://doi.org/10.1117/12.881658
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KEYWORDS
Etching

Double patterning technology

Oxides

Lithography

Optical lithography

Photomasks

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