Simulation-based scanner tuning using FlexRay capability and scatterometry

Karsten Bubke; Matthias Ruhm; Rafael Aldana; Martin Niehoff; Xu Xie; Justin Ghan; Paul van Adrichem; Holger Bald; Paul Luehrmann; Stefan Roling; Rolf Seltmann

doi:10.1117/12.890501

22 March 2011 Simulation-based scanner tuning using FlexRay capability and scatterometry

Karsten Bubke, Matthias Ruhm, Rafael Aldana, Martin Niehoff, Xu Xie, Justin Ghan, Paul van Adrichem, Holger Bald, Paul Luehrmann, Stefan Roling, Rolf Seltmann

Author Affiliations +

Proceedings Volume 7973, Optical Microlithography XXIV; 79732E (2011) https://doi.org/10.1117/12.890501
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Differences in imaging behaviour between lithographic systems of the same wavelength result in variations of optical proximity effects (OPE). A way to compensate these irregularities is through scanner tuning. In scanner tuning, scanner specific adjustments are obtained through the determination of scanner knob sensitivities of relevant structures followed by an optimization to adjust the structure CD values to be close to the desired values. Traditionally, scanner tuning methods have relied heavily on wafer-based CD metrology to characterize both the initial mismatch as well as the sensitivities of CDs to the scanner tuning knobs. These methods have proven very successful in reducing the mismatch, but their deployment in manufacturing has been hampered by the metrology effort. In this paper, we explore the possibility of using ASML's LithoTuner PatternMatcher FullChip (PMFC) computational lithography tool to reduce the dependence on wafer CD metrology. One tuning application using flexray illumination instead of traditional scanner knobs is presented in this work; in this application individual critical features in wafer printing are improved without affecting other sites. The limited impact of tuning on other structures is verified through full-chip LMC runs. Potential uses of this technology are for process transfers from one fab to another where the OPC signature in the receiving fab is similar but not identical to the signature of the originating fab. The tuning application is investigated with respect to its applicability in a production environment, including further metrology effort reduction by using scatterometry tools.

Citation Download Citation

Karsten Bubke, Matthias Ruhm, Rafael Aldana, Martin Niehoff, Xu Xie, Justin Ghan, Paul van Adrichem, Holger Bald, Paul Luehrmann, Stefan Roling, and Rolf Seltmann "Simulation-based scanner tuning using FlexRay capability and scatterometry", Proc. SPIE 7973, Optical Microlithography XXIV, 79732E (22 March 2011); https://doi.org/10.1117/12.890501

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KEYWORDS

Data modeling

Scanners

Scanning electron microscopy

Scatterometry

Metrology

Critical dimension metrology

Semiconducting wafers

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