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22 March 2011 Large scale model of wafer topography effects
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Abstract
A technique traditionally used for optical proximity correction (OPC) is extended to include topography proximity effects (TPE). Central to this is a thin-mask imaging model capable of addressing very large areas. This compact model being compatible with traditional fast imaging models used in OPC can then be used in standard correction approaches, compensating for both the optical proximity effects and wafer topography proximity effects. Model origin and model form are considered along with calibration process. Capturing ability and performance of the model are numerically evaluated on a number of test patterns. The performance of the model is close to that of models used in the planar case.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nikolay Voznesenskiy, Hans-Jürgen Stock, Bernd Küchler, Hua Song, James Shiely, and Lars Bomholt "Large scale model of wafer topography effects", Proc. SPIE 7973, Optical Microlithography XXIV, 79732G (22 March 2011); https://doi.org/10.1117/12.879605
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