A study of quantum lithography for diffraction limit

Sang-Kon Kim

doi:10.1117/12.879562

23 March 2011 A study of quantum lithography for diffraction limit

Sang-Kon Kim

Proceedings Volume 7973, Optical Microlithography XXIV; 79732X (2011) https://doi.org/10.1117/12.879562
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Since the diffraction limit of Rayleigh criterion hardly creates finer features, the development of technologies beyond the diffraction limit is a key merit without the shorter-wavelength source tool. In this paper, nano-phenomena to beat the Rayleigh criterion are described. For quantum lithography, collective behaviour of N-photon entangled states is modeled and simulated to show the effect of photon entangled states to 3-dimensional arbitrary pattern formation.

Citation Download Citation

Sang-Kon Kim "A study of quantum lithography for diffraction limit", Proc. SPIE 7973, Optical Microlithography XXIV, 79732X (23 March 2011); https://doi.org/10.1117/12.879562

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