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23 March 2011 A study of quantum lithography for diffraction limit
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Abstract
Since the diffraction limit of Rayleigh criterion hardly creates finer features, the development of technologies beyond the diffraction limit is a key merit without the shorter-wavelength source tool. In this paper, nano-phenomena to beat the Rayleigh criterion are described. For quantum lithography, collective behaviour of N-photon entangled states is modeled and simulated to show the effect of photon entangled states to 3-dimensional arbitrary pattern formation.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sang-Kon Kim "A study of quantum lithography for diffraction limit", Proc. SPIE 7973, Optical Microlithography XXIV, 79732X (23 March 2011); https://doi.org/10.1117/12.879562
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