4 April 2011 A new fast resist model: the Gaussian LPM
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BACKGROUND: Resist models for full-chip lithography simulation demand a difficult compromise between predictive accuracy and numerical speed. METHODS: Using a Gaussian approximation to the shape of the image-in-resist in the region of development near a feature edge, the integral normally solved numerically in the Lumped Parameter Model (LPM) can be evaluated analytically. As a result, a well known three-dimensional resist model (the LPM) can be used in only two-dimensions (the Gaussian LPM), greatly improving speed without significant loss of accuracy. RESULTS: For a positive resist, the image in the region of soluble resist material can be well approximated by a Gaussian image for all the mask features investigated. CONCLUSIONS: The Gaussian LPM is expected to have accuracy similar to the LPM but with substantially greater speed.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris A. Mack, Chris A. Mack, } "A new fast resist model: the Gaussian LPM", Proc. SPIE 7974, Design for Manufacturability through Design-Process Integration V, 79740B (4 April 2011); doi: 10.1117/12.881109; https://doi.org/10.1117/12.881109

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