4 April 2011 Standard cell electrical and physical variability analysis based on automatic physical measurement for design-for-manufacturing purposes
Author Affiliations +
Abstract
A fully automated system for process variability analysis of high density standard cell was developed. The system consists of layout analysis with device mapping: device type, location, configuration and more. The mapping step was created by a simple DRC run-set. This database was then used as an input for choosing locations for SEM images and for specific layout parameter extraction, used by SPICE simulation. This method was used to analyze large arrays of standard cell blocks, manufactured using Tower TS013LV (Low Voltage for high-speed applications) Platforms. Variability of different physical parameters like and like Lgate, Line-width-roughness and more as well as of electrical parameters like drive current (Ion), off current (Ioff) were calculated and statistically analyzed, in order to understand the variability root cause. Comparison between transistors having the same W/L but with different layout configurations and different layout environments (around the transistor) was made in terms of performances as well as process variability. We successfully defined "robust" and "less-robust" transistors configurations, and updated guidelines for Design-for-Manufacturing (DfM).
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eitan Shauly, Allon Parag, Hafez Khmaisy, Uri Krispil, Ofer Adan, Shimon Levi, Sergey Latinski, Ishai Schwarzband, Israel Rotstein, "Standard cell electrical and physical variability analysis based on automatic physical measurement for design-for-manufacturing purposes", Proc. SPIE 7974, Design for Manufacturability through Design-Process Integration V, 797410 (4 April 2011); doi: 10.1117/12.881841; https://doi.org/10.1117/12.881841
PROCEEDINGS
7 PAGES


SHARE
Back to Top