15 April 2011 Thermal effect on the I-V characteristics of TiO2 and GaN sol-gel driven Schottky diode
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TiO2 and GaN thin film were successfully fabricated on Si substrate by a sol-gel method. However, thin films did not show crystallinity structure without any treatment. To increase the crystallinity of thin films, TiO2 thin films were annealed while GaN was annealed under NH3 gas flow. The annealing temperature range was 700~900°C, and the effects of thermal effect on the structural and electrical properties of TiO2 and GaN films were studied. The resulting films show high crystallinity as indicated via the XRD analysis. As annealing temperature increases up to 900°C, the grain size and the surface roughness increases. Sol-gel thin film driven Schottky diodes are fabricated with Si and Al electrodes, and characterized by measuring their current-voltage behavior with -2~2 V range. TiO2 and GaN Schottky diode with high crytallinity structure show a high forward current.
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Yi Chen, Yi Chen, M. Maniruzzaman, M. Maniruzzaman, Seongcheol Mun, Seongcheol Mun, Jaehwan Kim, Jaehwan Kim, } "Thermal effect on the I-V characteristics of TiO2 and GaN sol-gel driven Schottky diode", Proc. SPIE 7980, Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2011, 79801E (15 April 2011); doi: 10.1117/12.881823; https://doi.org/10.1117/12.881823

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