1 April 2011 Multiresolution mask writing
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Proceedings Volume 7985, 27th European Mask and Lithography Conference; 798503 (2011) https://doi.org/10.1117/12.881929
Event: 27th European Mask and Lithography Conference, 2011, Dresden, Germany
Abstract
We propose changing the shot pattern between passes in multi-pass vector e-beam writing in order to reduce total shot count. One pass is detailed while the other is simplified. Mask process correction is used to produce the correct image from the sum of the exposures; a fundamental contstraint is enforced to retain process latitude. Results from a software implementation show a total shot savings in the range of 18 to 31 percent for two-pass writing versus the conventional writing scheme in which each pass writes identical shot sets. Simulation results demonstrate the feasibility of the technique.
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Emile Sahouria, "Multiresolution mask writing", Proc. SPIE 7985, 27th European Mask and Lithography Conference, 798503 (1 April 2011); doi: 10.1117/12.881929; https://doi.org/10.1117/12.881929
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