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1 April 2011 NGL masks: development status and issue
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Proceedings Volume 7985, 27th European Mask and Lithography Conference; 798505 (2011) https://doi.org/10.1117/12.896886
Event: 27th European Mask and Lithography Conference, 2011, Dresden, Germany
Abstract
Semiconductor lithography candidates toward 2xnm node and beyond include wide variety of options, such as extension of 193i, EUVL, NIL, and ML2. Most of those candidates, except ML2, need critical mask feature to realize effective high volume manufacturing. In this presentation, EUVL mask technology update and future issues will be presented.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Naoya Hayashi, Tsukasa Abe, Takeya Shimomura, Yuichi Inazuki, Tadahiko Takikawa, and Hiroshi Mohri "NGL masks: development status and issue", Proc. SPIE 7985, 27th European Mask and Lithography Conference, 798505 (1 April 2011); doi: 10.1117/12.896886; https://doi.org/10.1117/12.896886
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