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1 April 2011 Thermal nanoimprint (T-NIL) with photoresists for hybrid lithography
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Proceedings Volume 7985, 27th European Mask and Lithography Conference; 798506 (2011) https://doi.org/10.1117/12.882805
Event: 27th European Mask and Lithography Conference, 2011, Dresden, Germany
Abstract
During hybrid lithography of thermal nanoimprint with optical lithography, where both steps are performed within one single resist layer, changes of the lithographic performance of the material used during the first step, the thermal imprint, are essential for the overall lithography result. In order to characterize such changes two positive tone photoresists, AZ-1505 and ARP- 3510, were characterized by measurement of dose curves (relative resist layer thickness remaining after exposure and development) after a specific temperature treatment simulating the thermal imprint step. Obviously the two materials are affected in a somewhat different way. After temperature treatment at 120°C, ARP-3510 still features a higher sensitivity than AZ-1505, but the latter shows a higher contrast.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Khalid Dhima, Christian Steinberg, Saskia Möllenbeck, Andre Mayer, and Hella-Christin Scheer "Thermal nanoimprint (T-NIL) with photoresists for hybrid lithography", Proc. SPIE 7985, 27th European Mask and Lithography Conference, 798506 (1 April 2011); https://doi.org/10.1117/12.882805
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