19 January 2011 Comparison of TiO2-doped SiO2 films from two organosilicon precursors
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Proceedings Volume 7986, Passive Components and Fiber-Based Devices VII; 79860S (2011) https://doi.org/10.1117/12.888153
Event: Asia Communications and Photonics Conference and Exhibition, 2010, Shanghai, Shanghai, China
Abstract
In present work the effect of two different source of silicon Tetraethylorthosilicate and Octamethylcyclotetrasiloxane on TiO2-doped SiO2 films have been studied. The study reveals that film properties depend on the precursors used for deposition. The deposited films are crystalline with broad peak between 2θ = 20° - 30° corresponding to SiO2 and two strong peak appearing at 2θ = 38.3° and 2θ = 44.6° due to the (004) anatase phase and (210) rutile phase of TiO2. It is also clear from the SEM study that the particle size of films deposited using TEOS are smaller than the one deposited by OMCTS.
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Jaspal P. Bange, Jaspal P. Bange, Lalit S. Patil, Lalit S. Patil, D. K. Gautam, D. K. Gautam, "Comparison of TiO2-doped SiO2 films from two organosilicon precursors", Proc. SPIE 7986, Passive Components and Fiber-Based Devices VII, 79860S (19 January 2011); doi: 10.1117/12.888153; https://doi.org/10.1117/12.888153
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