7 January 2011 Influence of the thickness variation of the SiOx layer on the Si Quantum Dots based MOSLED
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Proceedings Volume 7987, Optoelectronic Materials and Devices V; 798703 (2011) https://doi.org/10.1117/12.889947
Event: Asia Communications and Photonics Conference and Exhibition, 2010, Shanghai, Shanghai, China
Abstract
The optical and electrical variation green and blue silicon quantum dot (Si-QD) based MOSLED with the different thickness of SiOx layer has been demonstrated. The turn-on voltage of the Si-QDs based MOSLED with the different RF plasma power is linearly enlarged by increasing the thickness of the SiOx layer. The turn-on electric field is still constant at 6.6x106 V/cm. The EL emission power of the blue Si-QD based MOSLED with increasing the thickness form 150 nm to 350 nm enhances from 55 nW to 470 nW due to the larger Si-QD amount from 1.5x1018 cm-3 to 4.3x1018 cm-3 in higher thickness. The blue Si-QDs based MOSLED with the SiOx thickness of 350 nm has the maximum EL power of 470 nW. The EL wavelength of the blue Si-QD based MOSLED red-shifts from 420 nm to 450 nm when the SiOx thickness increasing from 150 nm to 350 nm. The red-shifted phenomenon on EL spectra with increasing the thickness could be explained by means of the relationship between the varied Si-QD size and degraded electron conductivity. The EL wavelength of the Si-QD based MOSLED has a band filling effect phenomenon by the increment of the biased current and thickness. The distribution of Si-QD was uniform in whole SiOx layer although there existed different Si-QD size.
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Bo-Han Lai, Bo-Han Lai, Chih-Hsien Cheng, Chih-Hsien Cheng, Gong-Ru Lin, Gong-Ru Lin, } "Influence of the thickness variation of the SiOx layer on the Si Quantum Dots based MOSLED", Proc. SPIE 7987, Optoelectronic Materials and Devices V, 798703 (7 January 2011); doi: 10.1117/12.889947; https://doi.org/10.1117/12.889947
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